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Oxygenated Protocrystalline Silicon Thin Films for Wide Bandgap Solar Cells

Published online by Cambridge University Press:  01 February 2011

Ruud E.I. Schropp ,
Jan Willem Schüttauf  and
Karine van der Werf
Ruud E.I. Schropp
Affiliation:
r.e.i.schropp@uu.nl, Utrecht University, Debye Institute for Nanomaterials Scienc, Section Nanophotonics, P.O. Box 80.000, Utrecht, 3508 TA, Netherlands
Jan Willem Schüttauf
Affiliation:
j.a.schuttauf@uu.nl, Utrecht University, Utrecht, Netherlands
Karine van der Werf
Affiliation:
c.h.m.vanderwerf@uu.nl, Utrecht University, Utrecht, Netherlands
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Abstract

Protocrystalline silicon, which is a material that has enhanced medium range order (MRO), can be prepared by using high hydrogen dilution in PECVD, or, alternatively, using high atomic H production from pure silane in HWCVD. We show that this material can accommodate percentage-level concentrations of oxygen without deleterious effects. The advantage of protocrystalline SiO:H for application in multijunction solar cells is not only that it has an increased band gap, providing a better match with the solar spectrum, but also that the solar cells incorporating this material have a reduced temperature coefficient. Further, protocrystalline materials have a reduced susceptibility to light-induced defect creation. We present the unique result in the PV field that these oxygenated protocrystalline silicon solar cells have an efficiency temperature coefficient (TCE) that is virtually zero (TCE is between -0.08%/°C and 0.0/°C). It is thus beneficial to make this cell the current limiting cell in multibandgap cells, which will lead to improved annual energy yield.

Keywords

chemical vapor deposition (CVD) (deposition)photovoltaicSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A02-03
Copyright
Copyright © Materials Research Society 2010

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