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Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

Published online by Cambridge University Press:  01 February 2011

Yutaka Natsume  and
Takashi Minakata
Yutaka Natsume
Affiliation:
natsume.yc@om.asahi-kasei.co.jp, Asahi-Kasei corporation, Analysis & Simulation Center, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
Takashi Minakata
Affiliation:
minakata.tb@om.asahi-kasei.co.jp, Asahi-KASEI corporation, 2-1 Samejima, Fuji, Shizuoka, 4168501, Japan
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Abstract

We have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Keywords

solution depositionorganicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M10-32
Copyright
Copyright © Materials Research Society 2006

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