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Phonon Frequencies and Thermal Expansion of III-V Compounds

Published online by Cambridge University Press:  11 February 2011

Robert R. Reeber
Robert R. Reeber*
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7919
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Abstract

Thermal expansion is an important parameter for the design and manufacturing of dimensionally thermally stable opto-electronic integrated circuits and superlattices. In earlier work1, 2 we established the quantitative relationships between phonon frequencies and thermal expansion for Group IV semiconductors. In this paper we extend this approach to the III-V compounds GaAs, GaP, InP, GaSb, InAs, AlSb and InSb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M1.9
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Reeber, R. R., phys. stat. sol. (a) 32, 321 (1975).Google Scholar
2 Reeber, R. R. and Wang, K., Mat. Chem. And Phys. 46, 259 (1996).Google Scholar
3 Blackman, M., Hdb. Phys. Vol. VIII/1 Springer Verlag 325 (1955).Google Scholar
4 Reeber, R. R., phys. stat sol. (a) 26, 253 (1974).Google Scholar
5 Reeber, R. R., NATO Conference Proc. (Newcastle) Oct 1974, Petrophysics: The Physics and Chemistry of Minerals and Rocks ed. Strens, R.G.J., John Wiley, N.Y., 469, (1976).Google Scholar
6 Reeber, R. R., Fracture Mechanics of Ceramics, 6, Ed. Bradt, R.C., Evans, A.G., Hasselman, D.P.H. and Lange, F.F., Plenum Publishing Co. 545, (1983).Google Scholar
7 Straumanis, M.E., J. Appl. Phys. 21, (9) 936 (1950).Google Scholar
8 Blackman, M., Proc. Phys. Soc. 74, 17 (1959).Google Scholar
9 Reeber, R. R. and Wang, K., Electronic Mat. 25, (1) 63 (1996).Google Scholar
10 Reeber, R. R. and Haas, J.L., Thermal Expansion 8, Ed. Hahn, T.A., Plenum Pub. Co. p31(1984).Google Scholar
11 Reeber, R. R. and Wang, K., Mat. Res. Soc. Symp. Proc. 410, 211 (1996).Google Scholar
12 Reeber, R. R. and Wang, K., J. Mat. Res. 15, (1) 40 (2000).Google Scholar
13 Wang, K. and Reeber, R. R., Appl. Phys. Let. 79, (11) 1602 (2002).Google Scholar
14 Kudman, I. and Paff, R.J., J. Appl. Phys. 43, 3760 (1972).Google Scholar
15 Bisaro, R., Merenda, P. and Pearsall, T. P., Appl. Phys. Lett. 34, (1) 100 (1979).Google Scholar
16 Haruna, K., Maeta, H., Ohashi, K. and Koike, T., J. Phys. C, 20, 5275 (1987).Google Scholar
17 Yin, D.C. and Inatomi, Y., Cryst. Res. Technol. 35, (2) 221 (2002).Google Scholar