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Photoluminescence Excitation Dependence in Three-dimensional Si/SiGe Nanostructures

Published online by Cambridge University Press:  01 February 2011

Eun-Kyu Lee ,
Boris V. Kamenev ,
Theodore I. Kamins ,
Jean-Marc Baribeau ,
David J. Lockwood  and
Leonid Tsybeskov
Eun-Kyu Lee
Affiliation:
ekl2@njit.edu, New Jersey Institute of Technology, Electrical and Computer Engineering, University Heights, Newark, NJ, 07102, United States
Boris V. Kamenev
Affiliation:
kamenev@adm.njit.edu, New Jersey Institute of Technology, Electrical and Computer Engineering, Newark, NJ, 07102, United States
Theodore I. Kamins
Affiliation:
Kamins@hpl.hp.com, Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA, 94304, United States
Jean-Marc Baribeau
Affiliation:
jean-marc.baribeau@nrc-cnrc.gc.ca, Instutute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
David J. Lockwood
Affiliation:
david.lockwood@nrc-cnrc.gc.ca, Instutute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Leonid Tsybeskov
Affiliation:
tsybesko@adm.njit.edu, New Jersey Institute of Technology, Electrical and Computer Engineering, Newark, NJ, 07102, United States
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Abstract

We find that in SiGe clusters grown on Si using Stranski-Krastanov (S-K) growth mode, (i) photoluminescence (PL) spectra, (ii) PL lifetime and (iii) PL thermal quench activation energies exhibit strong dependence on the excitation intensity. Under PL excitation intensity increasing from 1 to 104 W/cm2, the PL spectra exhibit blue shift from below Ge bandgap up to ∼970 meV. The PL lifetime shows strong dependence on the excitation wavelength, decreasing from 20 μs at ∼0.8 eV to 200 ns at ∼ 0.9 eV. The process of PL thermal quench has two clearly distinguished activation energies. At low temperature, small (∼15 meV) and excitation-independent activation energy is attributed to exciton thermal dissociation. At higher temperature, excitation-dependent PL thermal quench activation energy (increasing from ∼ 120 to 340 meV as excitation intensity increases) is found, and it is attributed to hole redistribution via tunneling and/or thermal ionization over the Si/SiGe valence band energy barrier.

Keywords

GeSioptical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L03-05
Copyright
Copyright © Materials Research Society 2007

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References

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