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Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

Published online by Cambridge University Press:  28 February 2011

Z.P. Wang ,
Z.X. Liu ,
H.X. Han ,
J.Q. Zhang ,
G.H. Li ,
Z.L. Peng  and
S.X. Yuan
Z.P. Wang
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
Z.X. Liu
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
H.X. Han
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
J.Q. Zhang
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
G.H. Li
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
Z.L. Peng
Affiliation:
Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
S.X. Yuan
Affiliation:
Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
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Abstract

We have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Keywords

II-VI compoundsuperlatticequantum wellphotoluminescencepressure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 1017
Copyright
Copyright © Materials Research Society 1995

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References

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