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Photomking Determination of Mobility and Lifetime in Intrinsic a-Si:H

Published online by Cambridge University Press:  21 February 2011

Yi Tang ,
R. Braunstein  and
Bolko Von Roedern
Yi Tang
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
R. Braunstein
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
Bolko Von Roedern
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
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Abstract

A photomixing technique was employed to determine the lifetime and the mobility in intrinsic a-Si:H, by measuring the power of the beat frequency in conjunction with the dc. photocurrent. Both the mobility and lifetime were found to decrease continuously following the light-soaking process, which indicates the existence of long-range potential fluctuations and a change in the recombination processes due to light-soaking. For the first time, evidence is provided that degradation is accompanied by loss of mobility, a fact that is neglected in all prevailing models for the Staebler-Wronski effect. Intrinsic a-Si:H samples produced by glow-discharge deposition and the hot wire technique were employed in this work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 735
Copyright
Copyright © Materials Research Society 1992

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References

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