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Photo-stimulated Rebuilding of Structure in Semiconductors

Published online by Cambridge University Press:  21 March 2011

S. S. Rashidova ,
B. L. Oksengendler ,
N. N. Turaeva  and
I. M. Aripov
S. S. Rashidova
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
B. L. Oksengendler
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
N. N. Turaeva
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
I. M. Aripov
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
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Abstract

A strong electron-phonon interaction observed in semiconductors allows to realize a special kind of atomic rebuilding under photo-irradiation of the medium. We consider three types of defective structures: one atomic, two-atomic (“dump-bell”) and multi-atomic (kinks) defects. It is shown that an inversion effect of the defect potential term may be realized if there are non-equivalent neighboring positions of one-atomic and two-atomic defects. In this case the photo-excitation of electronic subsystems of these defects leads to an inversion of potential terms and a consecutive athermal rebuilding of the defective structures. The Yahn-Teller effect and psevdo-effect play a special role here. It is shown for kink-structures that the photo-excitation of the electronic subsystems results in the alteration of kink nonius and the successive exponentially strong decrease of an activation barrier. Especially effects of athermal atomic rebuilding of U-negative defects are considerable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.11.1
Copyright
Copyright © Materials Research Society 2002

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