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Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films

Published online by Cambridge University Press:  22 February 2011

N. K. Bambha ,
W. L. Nighan ,
I. H. Campbell ,
P. M. Fauchet  and
N. M. Johnson
N. K. Bambha
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy, Department of Electrical Engineering, Princeton University, Princeton NJ 08544
W. L. Nighan
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy, Department of Electrical Engineering, Princeton University, Princeton NJ 08544
I. H. Campbell
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy, Department of Electrical Engineering, Princeton University, Princeton NJ 08544
P. M. Fauchet
Affiliation:
Princeton Laboratory for Ultrafast Spectroscopy, Department of Electrical Engineering, Princeton University, Princeton NJ 08544
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyotte Hill Road, Palo Alto CA 94304
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Abstract

The lifetime of optically injected carriers is determined in polySi/SiO2/Si structures grown by LPCVD at 625°C. These samples are as-grown, have undergone H diffusion or have been implanted by phosphorous ions, followed by various annealing schedules. The lifetime measurement is done in an all-optical, contactless fashion, using the tools of picosecond time-resolved spectroscopy. We find that the lifetime due to recombination at the grain boundaries (trapping time) increases after implantation only if subsequent annealing increases the grain size. The trapping time also increases after hydrogen diffusion. After trapping in relatively shallow grain boundary states, thermalization into deeper lying states is slow on a subnanosecond time scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 323
Copyright
Copyright © Materials Research Society 1988

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References

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