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The Pile-Ups Of Aluminum And Boron In The Sige(C)

Published online by Cambridge University Press:  11 February 2011

Hong-Jyh Li ,
David Onsongo ,
Taras A. Kirichenko ,
Puneet Kohliand  and
Sanjay K. Banerjee
Hong-Jyh Li
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
David Onsongo
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Taras A. Kirichenko
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Puneet Kohliand
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Sanjay K. Banerjee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
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Abstract

Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F8.1
Copyright
Copyright © Materials Research Society 2003

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References

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