Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-29T15:28:28.489Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Modification Of Si-O-Si Bond Structure in Porous Sioch Films

Published online by Cambridge University Press:  01 February 2011

Fedor N Dultsev ,
Adam M Urbanowicz  and
Mikhail R Baklanov
Fedor N Dultsev
Affiliation:
baklanov@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, B-3001, Belgium, +32 16 281 606, +32 16 281 214
Adam M Urbanowicz
Affiliation:
urbano@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Mikhail R Baklanov
Affiliation:
baklanov@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Get access

Abstract

Plasma modification of SiOCH low-k films is analyzed by means of Molecular Mechanics. It is shown that the most probable mechanism of SiOCH modification in He plasma is removal of hydrogen atoms from CH3 groups. The change of Si–O–Si bond angles depends on the amount of the formed –CH2* (CHx) groups. During the followed exposure in NH3 plasma, NH2* radicals bind CHx groups with Si forming a –CH2– Si–O–Si–O–Si–O–Si– chain. The end of this chain gets bound to its beginning through NH2. This process is the reason of pore sealing.

Keywords

dielectricplasma depositioninfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N07-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Urbanowicz, A. M. et al. Electrochem. Sol.-St. Lett., 10/10, G76 (2007) .Google Scholar
2. Peng, H.G. et al.. J. Electrochem. Soc., 154(4) G85 (2007).Google Scholar
3. Tatsumi, T., Fukuda, S., S. Kadomura. Jpn. J. Appl. Phys. 32, 6114 (1993).Google Scholar
4. Tatsumi, T., Fukuda, S., Kadomura, S.. Jpn. J. Appl. Phys. 33, 2175 (1994)Google Scholar
5. Wolkenstein, T., Electronic Processes on Semiconductor Surfaces during Chemisorption, (Consultants, 1991) pp. 35–182.Google Scholar
6. Rothschild, A., Komem. Sensors and Actuators. B93. 362 (2003).Google Scholar
7. Dultsev, F.N., Sveshnikova, L.L.. Sensors & Actuators, B120, 434 (2007).Google Scholar
8. Dultsev, F.. J. Struct. Chem. 48/2, 236 (2007).Google Scholar
9. Baklanov, M. R. et al. J. Vac. Sci. Technol. B 18, 1385 (2000).Google Scholar
10. Tajimaa, N. et al.. Appl. Phys. Lett., 061907 (2006)Google Scholar
11. Zagorodniy, K., Hermann, H., and Taut, M.. Phys. Rev., B 75, 245430 (2007)Google Scholar
12. Zyubin, A.S. et al.. J. Chem. Phys., 116/1, 281–294. (2002).Google Scholar
13. Olivares-Roza, J., Sanchez, O., and Albella, J. M., J. Vac. Sci. Technol. A16, 2757 (1998)Google Scholar