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Point Defects in a Directly-Bonded Wafer, and its Comparison with the Bonded Soi Wafers

Published online by Cambridge University Press:  21 February 2011

Akira Usami ,
Keisuke Kaneko ,
Akira Ito ,
Shun-ichiro Ishigami  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Keisuke Kaneko
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Akira Ito
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Shun-ichiro Ishigami
Affiliation:
Mitsubishi Materials Co., Ltd., Omiya 330, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
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Abstract

<Directly-bonded wafers were characterized using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. We also studied silicon on insulator (SOI) wafers with different interfacial oxide thicknesses. In the active layers of the directly bonded wafer, two dominant electron traps (Ec-0.16eV, Ec-0.24eV) were observed at 23 μμμμm from the bonded interface. Both trap densities are almost constant (about 2 × 1011cm−3) at distances larger than about 10 μm. In the substrate, the density of the shallower electron trap increases (about 8 × 1011 cm−3) within about 20 μm from the interface, while the other trap concentration is almost constant and nearly equal to that in the active layers. No trap was observed near the wafer backside. These traps were also observed in the bonded SO1 wafers. Both the trap concentrations depend on the thickness of the bonded interfacial oxide. The shallower trap concentration increases with increasing oxide thickness, and the deeper one decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 567
Copyright
Copyright © Materials Research Society 1993

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References

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