Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-15T06:58:21.774Z Has data issue: false hasContentIssue false
  • English
  • Français

Preliminary Electrical Characterization of Pulsed-Plasma Enhanced Chemical Vapor Deposited Teflon-like Thin Films

Published online by Cambridge University Press:  15 February 2011

Catherine B. Labelle ,
Scott J. Limb ,
Karen K. Gleason  and
James A. Burns
Catherine B. Labelle
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
Scott J. Limb
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
Karen K. Gleason
Affiliation:
Department of Chemical Engineering, MIT Cambridge, MA 02139
James A. Burns
Affiliation:
MIT Lincoln Laboratory Lexington, MA 02173
Get access

Abstract

Pulsed-rf excitation of hexafluoropropylene oxide (HFPO) has been used to deposit films with chemical compositions similar to poly(tetrafluoroethylene) (PTFE). Films were deposited at pulse cycles of 10/20, 10/50, 10/200, and 10/400 ms on/ms off and analyzed using electron spin resonance spectroscopy (ESR). All four films produced similar broad ESR spectra, with an average width at maximum slope of ˜60 G and a g-value of 2.0045. The concentration of free electrons in a sample decreased with increasing pulse off time. This behavior can be modeled by the reaction of a free radical with a gas species, assuming that free radicals are generated only during the pulse on time. The films' dielectric constants were found to decrease from 1.99 to 1.95 for pulse off times increasing from 20 to 400 ms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 189
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Singer, P., Semiconductor Intl. 17, 52–56 (1994).Google Scholar
2. Laxman, R. K., Semiconductor Intl. 18, 71–74 (1995).Google Scholar
3. Singer, P., Semiconductor Intl. 19, 88–96 (1996).Google Scholar
4. Yasuda, H., J. Macromol. Sci.–Chem. A10, 383–420 (1976).Google Scholar
5. Morosoff, N., Crist, B., Bumgarner, M., Hsu, T., and Yasuda, H., J. Macromol. Sci.–Chem. A10, 451–471 (1976).Google Scholar
6. Yasuda, H. and Hsu, T., J. Poly. Sci.: Poly. Chem. Ed. 15, 81–97 (1977).Google Scholar
7. Morita, S., Sawa, G., and Ieda, M., J. Macromol. Sci.–Chem. A10, 501–517 (1976).Google Scholar
8. Yasuda, H. and Hsu, T. S., J. Poly. Sci.: Poly. Chem. Ed. 15, 2411–2425 (1977).Google Scholar
9. Assenheim, H. M., Introduction to Electron Spin Resonance (Plenum Press, New York, 1966).Google Scholar
10. Atkins, P. W. and Symons, M. C. R., The Structure of Inorganic Radicals (Elsevier Publishing Company, New York, 1967).Google Scholar
11. Wertz, J. E. and Bolton, J. R., Electron Spin Resonance: Elementary Theory and Practical Applications (McGraw-Hill Book Company, New York, 1972).Google Scholar
12. Savage, C. R., Timmons, R. B., and Lin, J. W., in Advances in Chemistry Series; Vol.236(American Chemical Society, 1993), p. 745–768.Google Scholar
13. Limb, S. J., Gleason, K. K., Edell, D. J., and Gleason, E. F.. Submitted to JVST-A.Google Scholar
14. Rodriguez, F., Principles of Polymer Systems, 3 ed. (Hemisphere Publishing Corporation, New York, 1989).Google Scholar
15. Limb, S. J. (Personal communication).Google Scholar