Published online by Cambridge University Press: 01 February 2011
This paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.