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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

Masanori Okuyama ,
Toshiyuki Nakaiso  and
Minoru Noda
Masanori Okuyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
Toshiyuki Nakaiso
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
Minoru Noda
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Abstract

Sr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.5.1
Copyright
Copyright © Materials Research Society 2001

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References

1) Higuma, Y., Matsui, Y., Okuyama, M., Nakagawa, T. and Hamakawa, Y.: Jpn. J. Appl. Phys. Suppl. 17–1 (1978) 209.10.7567/JJAPS.17S1.209Google Scholar
2) Hirai, T., Goto, T., Teramoto, K., Nishi, T. and Tarui, Y.: Jpn.J.Appl.Phys. 33 (1994) 5219.10.1143/JJAP.33.5219Google Scholar
3) Sugiyama, H., Nakaiso, T., Adachi, Y., Noda, M. and Okuyama, M.: Jpn.J.Appl.Phys. 39 (2000) 2131.10.1143/JJAP.39.2131Google Scholar
4) Nakamatsu, S., Kimura, M. and Kawamura, T.: J.Phys.Soc.Jpn. 38 (1975) 819.Google Scholar
5) Tokumitsu, E., Fujii, G. and Ishiwara, H.: Appl.Phys.Lett. 75 (1999) 575.10.1063/1.124446Google Scholar
6) Xiong, S. B. and Sakai, S.: Appl.Phys.Lett. 75 (1999) 1613.10.1063/1.124771Google Scholar
7) Kijima, T. and Matsunaga, H.: Jpn.J.Appl.Phys. 38 (1999) 2281.10.1143/JJAP.38.2281Google Scholar
8) Fujimori, Y., Izumi, N., Nakamura, T. and Kamisawa, A.: Jpn.J.Appl.Phys. 37 (1998) 5207.10.1143/JJAP.37.5207Google Scholar
9) Fujimori, Y., T, Nakamura and Kamisawa, A.: Jpn.J.Appl.Phys. 38 (1999) 2285.10.1143/JJAP.38.2285Google Scholar
10) Son, C. H., Nam, H. D., Jang, S. W. and Lee, H. Y.: J.Kor.Phys.Soc. 32 (1998) 1434.Google Scholar
11) Shoyama, M., Tsuzuki, A., Kato, K. and Murayama, N.: Appl.Phys.Lett. 75 (1999) 561.10.1063/1.124422Google Scholar
12) Prasadarao, A. V., Selvaraj, U. and Komarneni, S.: J.Mater.Res. 10 (1995) 704.10.1557/JMR.1995.0704Google Scholar
13) Okuwada, K., Nakamura, S. and Nozawa, H.: J.Mater.Res. 14 (1999) 855.10.1557/JMR.1999.0114Google Scholar
14) Nakaiso, T., Sugiyama, H., Noda, M. and Okuyama, M.: Jpn.J.Appl.Phys. to be published.Google Scholar