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Preparation and Properties of Barium Incorporated Strontium Bismuth Tantalate Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Chung-Hsin Lu  and
Cheng-Yen Wen
Chung-Hsin Lu
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C
Cheng-Yen Wen
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C
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Abstract

SrBi2Ta2O9thin films doped with barium ions were studied, in which Ba/(Sr+Ba) = 0.3 and 0.5, meanwhile the content of (Sr+Ba) remains unity to keep the stoichiometry of SrBi2Ta2O9. Films were deposited using metalorganic decomposition method with spin-on coating. Crystallinity, surface morphology, and ferroelectric properties of prepared thin films were investigated. From X-ray diffraction (XRD) analysis, barium ions substituted strontium ions in the SrBi2Ta2O9 lattice. Shift of diffraction peaks was observed, indicating a slight distortion of the lattice while barium ions incorporated into. The observation of prepared films indicated that the grain size of films annealed at 750 °C was about 0.7∼0.8 μm. Such barium incorporated SrBi2Ta2O9 thin films exhibited higher remanent polarization than the intrinsic SrBi2Ta2O9thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 229
Copyright
Copyright © Materials Research Society 1999

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References

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