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Preparation and Properties of Barium Incorporated Strontium Bismuth Tantalate Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Chung-Hsin Lu  and
Cheng-Yen Wen
Chung-Hsin Lu
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C
Cheng-Yen Wen
Affiliation:
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C
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Abstract

SrBi2Ta2O9thin films doped with barium ions were studied, in which Ba/(Sr+Ba) = 0.3 and 0.5, meanwhile the content of (Sr+Ba) remains unity to keep the stoichiometry of SrBi2Ta2O9. Films were deposited using metalorganic decomposition method with spin-on coating. Crystallinity, surface morphology, and ferroelectric properties of prepared thin films were investigated. From X-ray diffraction (XRD) analysis, barium ions substituted strontium ions in the SrBi2Ta2O9 lattice. Shift of diffraction peaks was observed, indicating a slight distortion of the lattice while barium ions incorporated into. The observation of prepared films indicated that the grain size of films annealed at 750 °C was about 0.7∼0.8 μm. Such barium incorporated SrBi2Ta2O9 thin films exhibited higher remanent polarization than the intrinsic SrBi2Ta2O9thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 229
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Araujo, C. A. Paz de, Cuchiaro, J. D., Scott, M. C., and McMillan, L. D., Int. Patent Appl. No. W093/12542, Jun. 24, (1993).Google Scholar
2. Aurivillius, B., Arkiv for Kemi 1, 463 (1949).Google Scholar
3. Aurivillius, B., Arkiv for Kemi 1, 499 (1949).Google Scholar
4. Aurivillius, B., Arkiv for Kemi 2, 519 (1950).Google Scholar
5. Park, S. S., Yang, C. H., Yoon, S. G., Ahn, J. H., and Kim, H. G., J. Electrochem. Soc. 144, 2855 (1997).Google Scholar
6. Zhu, Y., Desu, S. B., Li, T., and Ramanathan, S., J. Mater. Res. 12, 783 (1997).Google Scholar
7. Desu, S. B. and Vijay, D. P., Mater. Sci. Eng. B 32, 83 (1995).Google Scholar
8. Lu, C. H. and Wen, C. Y., Mater. Lett., in press (1998).Google Scholar
9. Wachsmuth, B., Zschech, E., Thomas, N. W., Brodie, S. G., Gurman, S. J., Baker, S., and Bayliss, S. C., phys. stat. sol. (a) 135, 59 (1993).Google Scholar
10. Arlt, G., Hennings, D., and With, D. de, J. Appl. Phys. 58, 1619 (1985).Google Scholar
11. Ren, S. B., Lu, C. J., Liu, J. S., Shen, H. M., and Wang, Y. N., Phys. Rev. B 54, 337 (1996).Google Scholar
12. Desu, S. B., Joshi, P. C., Zhang, X., and Ryu, S. O., Appl. Phys. Lett. 71, 1041 (1997).Google Scholar
13. Nagata, M., Vijay, D. P., Zhang, X., and Desu, S. B., phys. stat. sol. (a) 157, 75 (1996).Google Scholar
14. Cummins, S. E., and Cross, L. E., J. Appl. Phys. 39, 2268 (1968).Google Scholar