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Preparation of Aluminum Nitride and Oxynitride Thin Films by Ion-Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

J. D. Targove ,
L J. Lingg ,
J. P. Lehan ,
C. K. Hwangbo ,
H. A. Macleod ,
J. A. Leavitt  and
L. C. Mcintyre Jr
J. D. Targove
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, AZ 85721
L J. Lingg
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, AZ 85721
J. P. Lehan
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, AZ 85721
C. K. Hwangbo
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, AZ 85721
H. A. Macleod
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, AZ 85721
J. A. Leavitt
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ 85721
L. C. Mcintyre Jr
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ 85721
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Abstract

Aluminum nitride thin films have been deposited by ion-assisted deposition. Aluminum was electron-beam evaporated onto substrates with simultaneous nitrogen ion bombardment. Rutherford backscattering spectrometry showed that nitrogen-to-aluminum ratios of one or greater could be achieved with sufficient nitrogen ion fluxes. This excess nitrogen apparently degrades the optical properties of the films in the visible. Annealing at 500°C improves the optical properties drastically at the expense of a slight oxygen diffusion into the films. Finally, aluminum oxynitride films were deposited by adding an oxygen backfill to the vacuum chamber during deposition. These films had very similar optical properties to the annealed nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 311
Copyright
Copyright © Materials Research Society 1987

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References

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