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Preparation of GaAs Soi and its Laser Recrystallization

Published online by Cambridge University Press:  22 February 2011

LI Xiqiang ,
Chen Zhihao ,
Lin Chenglu  and
Wang Weiyuan
LI Xiqiang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Chen Zhihao
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Lin Chenglu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Wang Weiyuan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
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Abstract

GaAs SOI consisting of a sputtered GaAs film on a SiO2 −Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 621
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Appleton, B.R. and Celler, G.K. (editors), Laser and Electron-Beam Interaction with Solids, 1981 M.R.S. Symposia Proceedings (North-Holland, New York 1982).Google Scholar
2.Segui, Y., Casrere, F. and Bui, A., Thin Solid Films, 92, 303 (1982).Google Scholar
3.Alimonssas, L., Carchano, H. and Thomas, J.P., J. Phys., Colloq. (C1), 341 (1982).Google Scholar
4.Tsukada, N., Sugata, S. and Mita, Y., Appl. Phys. Letters, 42(5), 424 (1983).Google Scholar
5.Fan, J.C.C., Chapman, R.L., Donnelly, J.P., Turner, G.W. and Bozler, C.O., Laser and Electron Beam Solid Interactions and Materials Processing (Gibbons, J.F., Hess, L.D. and Sigmon, T.W., editors), M.R.S. Symposia Proceedings (North-Holland, New York 1981), pp. 261.Google Scholar
6.Tsou, S.C., Wang, W.Y., Lin, C.L. and Xia, G.Q., Ion Implantation: Equipment and Techniques (Rysel, H. and Glawisching, H., editors), Springer Series in Electro-Physics, 11, 538 (1983).Google Scholar
7.Okamoto, K. and Imai, T., Appl. Phys. Letters, 42(11), 972 (1983).Google Scholar
8.Li, X.Q. and Sun, B.Y., Luminescence and Display Devices, No.1, 53 (1983).Google Scholar
9.Stultz, T.J. and Gibbons, J.F., in ref. 1, pp.499.Google Scholar
10.Zehner, D.M., White, C.W., Appleton, B.R. and Ownby, G.W., in ref. 1 ,pp.683.Google Scholar
11.Johnson, N.M., Biegelsen, D.K. and Moyer, M.D., Appl. Phys. Letters, 38,900 (1981).Google Scholar
12.Ng, K.K., Celler, G.K., Povilonis, E.I., Frye, R.C., Leamy, H.J. and Sze, S.M., IEEE Electron Device Lett., EDL-2, 316 (1981).Google Scholar