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Preparation Of K3LI2NB5O15 (KLN) Thin Films by Rf-Magnetron Sputter Process

Published online by Cambridge University Press:  10 February 2011

Gwang-Tae Kim ,
Myung-Sik Park ,
Joon-Hyung Lee  and
Sang-Hee Cho
Gwang-Tae Kim
Affiliation:
Dept. of Inorganic Materials Engineering, Kyungpook National Univ., Taegu 702-701, Korea
Myung-Sik Park
Affiliation:
HAN Technology Co., 1370 Sankyuk-Dong, Puk-Gu, Taegu 702-701, Korea
Joon-Hyung Lee
Affiliation:
Dept. of Inorganic Materials Engineering, Kyungpook National Univ., Taegu 702-701, Korea
Sang-Hee Cho
Affiliation:
Center for Advanced Materials, Univ. of Massachusetts, Lowell, MA 01854, U.S.A.
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Abstract

In this study, the KLN thin films were prepared by RF-magnetron sputtering method onto Coming 1737 glass. The effect of working pressure, substrate temperature, RF-power, sputter gas ratio (Ar/O2) during deposition was investigated. For an optimum deposition condition, the postannealing, RTA(rapid thermal annealing) and IPA(in-situ post annealing)methods were employed. Both RTA and IPA processes, which were conducted at different deposition and annealing temperature influenced surface morphology and optical properties of the films. The films prepared by the IPA process showed a lower crystallization temperature and better optical transmittance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 195
Copyright
Copyright © Materials Research Society 2000

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