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Preparation, Properties and Applications of Free-Standing Porous Silicon Films

Published online by Cambridge University Press:  28 February 2011

J. Von Behren ,
L. Tsybeskov  and
P. M. Fauchet
J. Von Behren
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627 also at the Technical University of Munich, Garching, Germany
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627 also at the Laboratory for Laser Energetics and at the Institute of Optics
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Abstract

Using special electrochemical etching and lift-off steps, we have fabricated large-area freestanding porous silicon films in the thickness range from 0.1 μm to 50 μm. Their transmission is near 100% in the near infrared which is indicative of very high porosity/low index of refraction films. These optically flat and homogeneous films exhibit no surface and bulk scattering, despite the fact that they did not undergo supercritical drying. The relationship between the absorption coefficient, the luminescence spectrum, and the chemical and structural properties is examined as a function of preparation and post-treatment conditions. Because of their superior optical properties, these films are suitable for many device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 333
Copyright
Copyright © Materials Research Society 1995

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References

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