Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2025-01-01T04:13:51.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Nan Chen ,
G. R. Bai ,
O. Auciello ,
R. E. Koritala  and
M. T. Lanagan
Nan Chen
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
G. R. Bai
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
O. Auciello
Affiliation:
Materials Science Division Argonne National Laboratory, Argonne, IL 6049-488
R. E. Koritala
Affiliation:
Energy Technology Division Argonne National Laboratory, Argonne, IL 6049-488
M. T. Lanagan
Affiliation:
Energy Technology Division Argonne National Laboratory, Argonne, IL 6049-488
Get access

Abstract

Single-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 345
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shirane, G., Sawaguchi, E., and Takagi, Y., Phys. Rev. 84, 476 (1951).Google Scholar
2. Sawaguchi, E., Maniwa, H., and Hoshino, S., Phys. Rev. 83, 1078 (1951).Google Scholar
3. Tani, T., Li, J. F., Viehland, D., and Payne, D. A., J. Appl. Phys. 75, 3017 (1994).Google Scholar
4. Kanno, I., Hayashi, S., Kitagawa, M., Takayama, R., and Hirao, T., Appl. Phys. Lett. 66, 145 (1995).Google Scholar
5. Li, K. K., Wang, F., and Haertling, G.H., J. Mater. Sci. 30, 186 (1995).Google Scholar
6. Yamakawa, K., Trolier-McKinstry, S., Dougherty, J. P., and Krupanidhi, S. B., Appl. Phys. Lett. 67, 2014 (1995).Google Scholar
7. Dormans, G. J. M., Keijser, M. de, and Veldhoven, P. J. van, Mater. Res. Soc. Symp. Proc. 243, 203 (1992).Google Scholar
8. Bai, G. R., Chang, H. L. M., Lam, D. J., and Gao, Y., Appl. Phys. Lett. 62, 1754 (1993).Google Scholar
9. Shimizu, M., Sugiyama, M., Fujisawa, H., and Shiosaki, T., Jpn. J. Appl. Phys. 33, 5167 (1994).Google Scholar
10. Foster, C. M., Chan, S. K., Chang, M., Chiarello, R. P., Zhang, T. J., Guo, J., and Lam, D. J., J. Appl. Phys. 73, 7823 (1993).Google Scholar
11. Shiosaki, T., Fujisawa, H., and Shimizu, M., IEEE Proc. 10th Internat. Symp. Appl. Ferro. 1, 45 (1996).Google Scholar
12. Chen, N., Bai, G. R., Foster, C. M., Auciello, O., Brukman, M. J., and Lanagan, M. T., Ceram. Trans., in press (1998).Google Scholar
13. Auciello, O., Gifford, K. D., and Kingon, A. I., Appl. Phys. Lett. 64, 2873 (1994).Google Scholar
14. Aoki, K., Fukuda, Y., Numata, K., and Nishimura, A., Jpn. J. Appl. Phys. 4, 192 (1995).Google Scholar
15. Willems, G. J., Wouters, D. J., and Maes, H. E., Integrated Ferro. 15, 19 (1997).Google Scholar
16. Muralt, P., Maeder, T., Sagalowicz, L., Hiboux, S., Scalese, S., Namuovic, D., Agostino, R. G., Xanthopoulos, N., Mathieu, H. J., Patthey, L., and Bullock, E. L., J. Appl. Phys. 88, 85 (1998).Google Scholar
17. Yamakawa, K., Trolier-McKinstry, S., and Dougherty, J. P., IEEE Proc. 10th Intemat. Symp. Appl. Ferro. 1, 405 (1996).Google Scholar