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Properties Of High Dose Low Temperature Rapid Thermally Annealed Gallium Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

Y.H. Lee ,
H.B. Harrison ,
A.P. Pogany  and
G.L. Olson
Y.H. Lee
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
H.B. Harrison
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, 124 LaTrobe St., Melbourne, 3000, Australia.
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, California 90265, U.S.A.
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Abstract

High doses: 1, 3 and 6×1015/cm2 of Ga71+ ions were implanted into <100> silicon at 100keV and annealed in the temperature regime of 550-675° C for seconds to tens of seconds. Two different annealing rigs were used; however the physical and electrical results obtained from each provided remarkably similar results.

We have observed a regrowth rate/dose dependency through both our physical and electrical measurements that provide surprisingly good correlation. We also note that for the highest dose complete solid phase epitaxial regrowth is inhibited, and for temperatures as low as 640°C and times as short as 9sec. onset of movement of the gallium toward the surface is observed. We also show that extremely high free carrier concentrations of gallium can be obtained under the correct anneal conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 21
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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