Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-14T08:50:33.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate

Published online by Cambridge University Press:  01 February 2011

Leonardo Lari ,
Robert T Murray ,
Mhairi H Gass ,
Timothy J Bullough ,
Paul R Chalker ,
Caroline Chèze ,
Lutz Geelhaar  and
Henning Riechert
Leonardo Lari
Affiliation:
l.lari@liv.ac.uk, University of Liverpool, Dept. of Engineering, George Holt Building, Liverpool, L69 3GH, United Kingdom
Robert T Murray
Affiliation:
c/o L.lari@liv.ac.uk, University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Mhairi H Gass
Affiliation:
mgass@liv.ac.uk, SuperSTEM Laboratory, STFC Daresbury, Daresbury, WA4 4AD, United Kingdom
Timothy J Bullough
Affiliation:
timbull@liverpool.ac.uk, University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Paul R Chalker
Affiliation:
pchalker@liverpool.ac.uk, University of Liverpool, Dept. of Engineering, Liverpool, L69 3GH, United Kingdom
Caroline Chèze
Affiliation:
Caroline.Cheze@qimonda.com, Qimonda, Munich, D-81730, Germany
Lutz Geelhaar
Affiliation:
lutz.geelhaar@namlab.com, Qimonda, Munich, D-81730, Germany
Henning Riechert
Affiliation:
Henning.Riechert@qimonda.com, Qimonda, Munich, D-81730, Germany
Get access

Abstract

Quantitative analysis of the elemental distributions within AlGaN has been investigated using electron energy loss spectroscopy in a scanning transmission electron microscopy. The nanowires were grown on c-sapphire by radio frequency plasma assisted molecular beam epitaxy. Crystallographic and compositional analyses of the nickel seeds used to promote the nanowire type growth yielded values of lattice spacings within the seeds remaining at the growth tip which were attributed to either (002) NiO, (111) Ni3Ga or (111) Ni-Ga solid solution. The seeds structures exhibited a metallic core encompassed by an oxide shell. The relative gallium and nickel concentrations were quantified by EELS analyses and were found to be consistent with the equilibrium phase α' of Ni3Ga or Ni-Ga solid solution. No nitrogen was observed within the seeds, which is predicted thermodynamically due to the instability of Ni-N compounds at the NW growth temperature used in this study. No aluminium was detected at the tip of nanowires. These measurements are compared with previous studies made concerning pure GaN nanowires. The Al distribution along the nanowire length was measured and is discussed in respect of a possible Al incorporation mechanism.

Keywords

electron energy loss spectroscopy (EELS)nanostructuremolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C01-05
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Johnson, J.C., Heon, J.C., Knutsen, K.P., Schaller, R.D., Yang, P.D. and Saykally, R.J., Nat. Mater. 1 (2002), 106.10.1038/nmat728Google Scholar
2. Huang, Y., Duan, X., Cui, Y.X. and Lieber, C.M., Nano Lett. 2 (2002), 101.10.1021/nl015667dGoogle Scholar
3. Wang, X. and Yoshikawa, A., Progr. Cryst. Growth Charac. Mat. 48, (2004) 42.10.1016/j.pcrysgrow.2005.03.002Google Scholar
4. Geelhaar, L., Chéze, C., Weber, W.M., Averbeck, R., Riechert, H., Kehagias, Th., Komninou, Ph., Dimitrakopulos, G.P. and Karakostas, Th., Appl. Phys. Lett. 91, 093113 (2007)Google Scholar
5. Calleja, E., Sánchez-Garciá, M. A., Sánchez, F. J., Calle, F., Naranjo, F. B., Muñoz, E., Jahn, U., and Ploog, K., Phys. Rev. B 62, (2000) 16826.10.1103/PhysRevB.62.16826Google Scholar
6. Wagner, R.S. and Ellis, W.C., Appl. Phys. Lett. 4 (1964), 89.10.1063/1.1753975Google Scholar
7. Persson, A.I., Larsson, M.W., Stenstrom, S., Ohlsson, B.J., Samuelson, L. and Wallenberg, L.R., Nature Mater. 3 (2004), 677.10.1038/nmat1220Google Scholar
8. Petkov, V., Gateshki, M., Choi, J., Gillan, E.G., Ren, Y., J. Mater. Chem. 15 (2005), 4654–4659.10.1039/b509577hGoogle Scholar
9. Schmahl, N.G., Barthel, J., Eikerling, G.F., Gold Book of Phase Trans. (Wroclaw 2002), 1.Google Scholar
10. Feschotte, P. and Eggiman, P., J. Less-Common Met. 63, (1979) 15.10.1016/0022-5088(79)90205-4Google Scholar
11. Pearson, W. B., Nature 173, (1954) 364 10.1038/173364a0Google Scholar
12. Liu, D. R. and Brown, M., Journal of Microscopy 147, (1987) 37.10.1111/j.1365-2818.1987.tb02816.xGoogle Scholar
13. Wriedt, H.A.: In Phase Diagrams of Binary Nickel Alloys, edited by Nash, P. (ASM International, Materials Park, OH, 1991) pp. 213–216 Google Scholar
14. Egerton, R.F. in Electron energy-loss spectroscopy in the electron microscope, published by Plenum Press (New York) (1996).10.1007/978-1-4757-5099-7Google Scholar
15. Lee, S.Y. and Nash, P.: In Phase Diagrams of Binary Nickel Alloys, edited by Nash, P. (ASM International, Materials Park, OH, 1991) pp. 133–140.Google Scholar
16. Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., Geelhaar, L., Riechert, H., Physica E (2007), doi:10.1016/j.physe.2007.10.003.Google Scholar
17. Kehagias, T., Komninou, P., Dimitrakopulos, G.P., Sahonta, S.-L., Chéze, C., Geelhaar, L., Riechert, H., and Karakostas, T., Proceedings of the XV Conference on “Microscopy of Semiconducting Materials”, Cambridge, UK, 2007, to be published.Google Scholar
18. Script based on the “binned gain averaging method” by Bosman, Dr. M. for Gatan DM modified by Wang, Dr. P. of SuperSTEM laboratory in UK.Google Scholar
19. Nash, P., Singleton, M. F., and Murray, J. L., Phase Diagrams of Binary Nickel Alloys, edited by Nash, P. (ASM, Metals Park, OH, 1991), p. 3.Google Scholar
20. Daudin, B. and Widmann, F., J. Cryst. Growth 182, (1997) 1.10.1016/S0022-0248(97)00339-4Google Scholar
21. Iliopoulos, E. and Moustakas, T. D., Appl. Phys. Lett. 81, (2002) 295.10.1063/1.1492853Google Scholar