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A Quantitative Model for the Metastable Defect Creation in Amorphous Semiconductors by Kev-Electron Irradiation

Published online by Cambridge University Press:  16 February 2011

A. Scholz ,
B. Schröder  and
H. Oechsner
A. Scholz
Affiliation:
University of Kaiserslautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
B. Schröder
Affiliation:
University of Kaiserslautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
H. Oechsner
Affiliation:
University of Kaiserslautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
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Abstract

The interaction mechanisms of keV-electrons with the hydrogenated Amorphous semiconductor are briefly discussed and the differences to the metastable defect creation by photons are set out. Based on the knowlegde of the energy dissipation mechanisms of keV-electrons in the hydrogenated Amorphous semiconductor, a model for the creation of metastable defects by keV-electron irradiation is developed and its quantitative agreement with the experimental results is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 293
Copyright
Copyright © Materials Research Society 1994

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References

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