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Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures

Published online by Cambridge University Press:  13 February 2014

J. Anaya ,
A. Torres ,
J. Jiménez ,
A. Rodríguez ,
T. Rodríguez  and
C. Ballesteros
J. Anaya
Affiliation:
Optronlab Group, Departamento de Física de la Materia Condensada, Centro I+D, Universidad de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
A. Torres
Affiliation:
Optronlab Group, Departamento de Física de la Materia Condensada, Centro I+D, Universidad de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Optronlab Group, Departamento de Física de la Materia Condensada, Centro I+D, Universidad de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
A. Rodríguez
Affiliation:
Departamento de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Departamento de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
C. Ballesteros
Affiliation:
Departamento de Física, E.P.S., Universidad Carlos III, 28911 Leganés (Madrid), Spain
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Abstract

The control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.

Keywords

nanostructureRaman spectroscopytransmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1659: Symposium SS/XX – Micro- and Nanoscale Systems – Novel Materials, Structures and Devices , 2014 , pp. 143 - 148
Copyright
Copyright © Materials Research Society 2014 

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References

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