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Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H

Published online by Cambridge University Press:  28 February 2011

M. E. Savage ,
U. JaYamaha ,
A. Compaan ,
A. Aydinli  and
Dashen Shen
M. E. Savage
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
U. JaYamaha
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
A. Compaan
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
A. Aydinli
Affiliation:
Department of Physics, Bilkent University, Bilkent, Ankara, 06533, Turkey
Dashen Shen
Affiliation:
Dept. of Electrical and Computer Engineering, University of Alabama, Huntsville, AL 35899
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Abstract

Extremely heavily doped polycrystalline silicon films were prepared by multiple-pulse XeCl excimer laser annealing of hydrogenated amorphous silicon films. The as-grown films used here included five types: intrinsic, boron-doped, phosphorous-doped, and carbon alloyed with and without boron doping. Raman studies reveal that the annealed films prepared from the boron or phosphorous doped a-Si:H have high carrier activation and display the interference lineshape (Breit-Wigner-Fano) of the discrete phonons (Si-Si and Si-B modes) interacting with the continuum of the single particle electronic Raman scattering. The Raman lineshapes indicate concentrations of ∼1 × 1021 cm3. This is confirmed by dark conductivities exceeding 100 S/cm in the annealed boron-doped and phosphorous-doped layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 665
Copyright
Copyright © Materials Research Society 1993

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