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Rapid Self-Ion Stimulated Process for TiSi2 thin Film Formation

Published online by Cambridge University Press:  15 February 2011

V. I. Chapljuk ,
I. V. Gusev  and
V. P. Belevsky
V. I. Chapljuk
Affiliation:
Kiev Research Institute for Microdevices, Severo-Syretskaya Str. 3, Kiev, 254136, Ukraine
I. V. Gusev
Affiliation:
Kiev Research Institute for Microdevices, Severo-Syretskaya Str. 3, Kiev, 254136, Ukraine
V. P. Belevsky
Affiliation:
Kiev Research Institute for Microdevices, Severo-Syretskaya Str. 3, Kiev, 254136, Ukraine
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Abstract

A method, technological arrangement, and some special features of the process for TiSi2 thin film formation is described in details. Rapid formation of low-resistivity single-phase TiSi2 layers is realized directly during deposition of Ti onto Si from DC plasma of metal vapour with simultaneous powerful self-ion bombardment at Wi > 2.5–3.1 W/cm2. Accelerated reactive diffusion is activated by thermal (dT/dτ ≥ 10°C/sec) and radiation (Eadd ≤ 2500 eV/atom) effects of powerful Ti+-ion bombardment. Thin TiSi2 layers with resistivity ρ = 13–20 μΩcm are formed on different Si substrates under optimum energetic conditions after 50 sec of the deposition. The film structure formation passes through three kinetic stages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 555
Copyright
Copyright © Materials Research Society 1996

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