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Rbs Analysis of Intermixing in Annealed Samples of Pt/Ti/Iii-V Semiconductors

Published online by Cambridge University Press:  25 February 2011

W. Savin ,
B. E. Weir ,
A. Katz ,
S. N. G. Chu ,
S. Nakahara  and
D. W. Harris
W. Savin
Affiliation:
New Jersey Institute of Technology, Newark, NJ
B. E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
D. W. Harris
Affiliation:
Charles Evans and Associates, Redwood City, CA
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Abstract

Low resistance Pt/Ti nonalloy contacts to GaAs, GaP, In As, InGaAs, and In Alas have been studied using Rutherford Backscattering. The samples were studied by comparing an as deposited structure to samples annealed at temperatures between 300°C and 600°C for 30 s. For all samples intermixing of the Pt and Ti was observed to start at 350°C. The Ti/HI-V semiconductor interface mixing was strongest for As when it was present, but In and Ga also strongly intermixed for anneals of 4S0°C and above.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 227
Copyright
Copyright © Materials Research Society 1990

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References

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