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Reconstruction From an Oxidized Si(111) Surface Studied by High-Temperature STM

Published online by Cambridge University Press:  21 February 2011

T. Sato ,
T. Sueyoshi ,
M. Iwatsuki  and
M. Kersker
T. Sato
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
T. Sueyoshi
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
M. Iwatsuki
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
M. Kersker
Affiliation:
JEOL USA Inc., Peabody, MA 01960
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Abstract

We have investigated the transitions that take place at high-temperature from the oxidized state to the 7×7 phase on the Si (111) surface using high-temperature (HT) scanning tunneling microscopy (STM). The oxidized surface was transformed at 580 °C after oxidation by exposing the surface to 45 L of oxygen at 480° C The structural modification was directly observed by HT-STM. The corner adatom was created at the initial stage of the reconstruction, and then the disordered, 5×5 and 7×7 phases successively appeared on the surface. By etching Si atoms, the island structure was formed on the surface because of the reduced Si density. Finally, the completed 7×7 terrace was created.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 259
Copyright
Copyright © Materials Research Society 1995

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References

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