Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-15T07:11:31.893Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability of Cu/WN thin Films Deposited on Low Dielectric Constant SiOF ILD

Published online by Cambridge University Press:  10 February 2011

Seoghyeong Lee ,
Dong Joon Kim ,
Sung-Hoon Yang ,
Jeongwon Park ,
Seil Sohn ,
Kyunghui Oh ,
Yong-Tae Kim  and
Jong-Wan Park
Seoghyeong Lee
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Dong Joon Kim
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Sung-Hoon Yang
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Jeongwon Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Seil Sohn
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Kyunghui Oh
Affiliation:
Reliability Technology Div., National Institute of Technology and Quality, Kwacheon, Kyungkido, 427-010, Korea
Yong-Tae Kim
Affiliation:
Semiconductor Materials Research Lab., Korea Institute of Science and Technology, Seoul 136-791, Korea
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133-79 1, Korea
Get access

Abstract

The effect of the post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films was studied. Also, the thermal stability of a Cu/WN interconnect system with SiOF intermetal dielectrics was examined by RTA. The surface roughness of SiOF films increased with the increasing plasma treatment power due to ion bombardment effect during the plasma treatment. As the plasma treatment power increased, the dielectric constant increased from 3.16 to 3.43, while the change in the relative dielectric constant of the plasma treated films by the boiling treatment was decreased in magnitude. Furthermore, the chemical properties of the plasma treated SiOF films near the top layer tend to resemble those of thermal oxides by the plasma treatment of sufficient power because of the reduction in the Si-F bonding in the films. In the case of Cu/WN/SiOF/Si multilayer structure, surface oxidation and densification due to the plasma treatment seemed to play an important role in protecting the interdiffusion between SiOF and metal interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 347
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Laxman, Ravi K., Semiconductor International 18(5), 71(1995).Google Scholar
2. Homma, T., Murao, Y. and Yamagushi, R., J. Electrochem. Soc., 140, 3599 (1993)Google Scholar
3. Lee, Seoghyeong and Park, Jong-Wan, J. Appl. Phys., 80(9), 5260 (1996).Google Scholar
4. Tamura, T., Inoue, Y., Satoh, M., Yoshitaka, H. and Sakai, J., Jpn. J. Appl. Phys., 35, 2526 (1996).Google Scholar
5. Mei, Y.J., Chang, T.C., Chang, S.J., Pan, F.M., Chen, M.S.K., Tuan, A., Chou, S. and Chang, C.Y., Thin Solid Films, 308/309 501 (1997)Google Scholar
6. Shapiro, M.J., Nguyen, S.V., Matsuda, T. and Dobuzinsky, D., Thin Solid Films, 270, 503 (1995).Google Scholar
7. Homma, T., Thin Solid Films, 278, 28 (1996).Google Scholar
8. Mizuno, S., Verma, A., Lee, P. and Nguyen, B., Thin Solid Films, 279, 82 (1996).Google Scholar
9. Giutmann, R.J., Chow, T.P., Kaloyeros, A.E., Lanford, W.A. and Muraka, S.P., Thin Solid Films, 262, 177 (1995)Google Scholar