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Reliability of Dielectric Barrier Films in Copper DamasceneApplications

Published online by Cambridge University Press:  17 March 2011

Albert S. Lee ,
Annamalai Lakshmanan ,
Nagarajan Rajagopalan ,
Zhenjiang Cui ,
Maggie Le ,
Li Qun Xia ,
Bok Heon Kim  and
Hichem M'Saad
Albert S. Lee
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Annamalai Lakshmanan
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Nagarajan Rajagopalan
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Zhenjiang Cui
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Maggie Le
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Li Qun Xia
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Bok Heon Kim
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
Hichem M'Saad
Affiliation:
Dielectric Systems & Modules Product Business Group Applied Materials Inc., Santa Clara, CA 95054, U.S. A
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Abstract

The film properties of two PECVD deposited dielectric copper barrier filmshave been optimized to improve BEOL device reliability in terms ofelectromigration. Two critical aspects that affect electromigration are thedielectric barrier film hermeticity and adhesion to copper. We use a methodto quantify the barrier film hermeticity and have optimized the hermeticityof the BLOκ™ low-κ dielectric barrier film to be similar to that of siliconnitride. By using FT-IR we find that the film porosity has a much strongereffect than the film stoichiometry on hermeticity. In addition, theinterfaces between Damascene Nitride™ with copper, as well as BLOκ withcopper have been engineered to improve the interfacial adhesion energy to>10 J/m2 for both Damascene Nitride and BLOκ.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F5.10
Copyright
Copyright © Materials Research Society 2004

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