Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-13T02:53:43.955Z Has data issue: false hasContentIssue false
  • English
  • Français

Remote Plasma Cleaning and Ion-Induced Hydrogen Desorption from the Silicon (100) Surface and Its Applications to Si Epitaxy

Published online by Cambridge University Press:  25 February 2011

David S. Kinosky ,
R. Qian ,
A. Mahajan ,
S. Thomas ,
J. Fretwell ,
P. Munguia ,
S. Banerjee  and
A. Tasch
David S. Kinosky
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
R. Qian
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
A. Mahajan
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
S. Thomas
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
J. Fretwell
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
P. Munguia
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
S. Banerjee
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
A. Tasch
Affiliation:
Department of Electrical and Computer Eng., Microelectronics Research Center, University of Texas, Austin, TX 78712
Get access

Abstract

We have studied the conditions for effective removal of H from the silicon (100) surface by Ar and He plasma bombardment as a function of pressure, plasma power and time. At a given pressure, a range of rf plasma powers exists for effective H-desorption. For example, at 250°C and for 100 mTorr of He, H is desorbed only between 12 and 50W of plasma power. The range of effective powers was found to become narrower with increasing pressure. We have also found the efficacy of the H-plasma clean to be reduced by addition of He and Ar. Substrate damage results from Ar addition and from increased plasma power for pure H. The results are discussed along with Langmuir probe analysis of the various plasma conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 831
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Mahajan, A., Kinosky, D., Qian, R., Iiby, J., Thomas, S., Banerjee, S. and Tasch, A., Proc. of 2nd Int Conf. on Atomic Layer Epitaxy, to be published in Thin Solid Films.Google Scholar
[2] Kinosky, D., Anthony, B., Hsu, T., Qian, R., Inby, J., Banerjee, S. and Tasch, A., Proc. of the 2nd Intl. Symp. on Cleaning Tech. in Semiconductor Device Mfg., Proc. Electrochem. Soc. 9: (12), (1992) 445.Google Scholar
[3] Anthony, B., Breaux, L., Hsu, T., Banerjee, S. and Tasch, A., J. Vac. Sci. Technol. B7 (4) (1989 621.Google Scholar
[4] Hsu, T., Anthony, B., Qian, R., Irby, J., Mahajan, A., Banerjee, S., Magee, C. and Tasch, A., J Electron. Mat., 21 (1) (1992) 65.Google Scholar
[5] Tasch, A., Banerjee, S., Anthony, B., Hsu, T., Qian, R., Irby, J. and Kinosky, D., Proc. of the 2nd Int. Symp. on Cleaning Tech. in Semiconductor Device Mfg., Proc. Electrochem. Soc. 92 (12), (1992) 427.Google Scholar