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The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Laura Fè ,
B. Malič ,
G. Norga ,
M. Kosec ,
D. J. Wouters ,
T. A. Bartic  and
H. E. Maes
Laura Fè
Affiliation:
IMEC, Kapeldreef 75, B001 Leuven, Belgium, laurafe@imec.be
B. Malič
Affiliation:
Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
G. Norga
Affiliation:
IMEC, Kapeldreef 75, B001 Leuven, Belgium
M. Kosec
Affiliation:
Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
D. J. Wouters
Affiliation:
IMEC, Kapeldreef 75, B001 Leuven, Belgium
T. A. Bartic
Affiliation:
IMEC, Kapeldreef 75, B001 Leuven, Belgium
H. E. Maes
Affiliation:
IMEC, Kapeldreef 75, B001 Leuven, Belgium
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Abstract

Modified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 369
Copyright
Copyright © Materials Research Society 1999

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References

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