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The Role of the Band GAP in the Light-Induced Degradation of Amorphous Silicon Alloys

Published online by Cambridge University Press:  16 February 2011

Thomas Unold
Thomas Unold*
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
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Abstract

The dependence of the light-induced degradation on the band gap and hydrogen content in Amorphous silicon and related alloys is discussed. A simple model is presented which predicts that the light-induced degradation should be strongly correlated with the optical gap. In particular, for materials with Egap smaller than approximately 1.2eV no degradation is expected. The implications and consequences of the model for the task of reducing metastability in Amorphous silicon alloys are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 287
Copyright
Copyright © Materials Research Society 1994

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References

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