Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-10T09:59:14.614Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning Near-Field Microwave Probe for In-line Metrology ofLow-K Dielectrics

Published online by Cambridge University Press:  17 March 2011

Vladimir V. Talanov ,
Robert L. Moreland ,
André Scherz ,
Andrew R. Schwartz  and
Youfan Liu
Vladimir V. Talanov
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Robert L. Moreland
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
André Scherz
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Andrew R. Schwartz
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705, USA
Youfan Liu
Affiliation:
Intel Assignee, International Sematech, Austin, TX 78741, USA
Get access

Abstract

We have developed a novel microwave near-field scanning probe technique fornon-contact measurement of the dielectric constant of low-k films. Thetechnique is non-destructive, noninvasive and can be used on both porous andnon-porous dielectrics without any sample preparation. The probe has afew-micron spot size, which makes the technique well suited for real timelow-k metrology on production wafers. For dielectrics with k<4 theprecision and accuracy are better than 2% and 5%, respectively. Results forboth SOD and CVD low-k films are presented and show excellent correlationwith Hg-probe measurements. Results for k-value mapping on blanket 200mmwafers are presented as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F5.11
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Semiconductor Industry Association. International Technology Roadmap for Semiconductors. Austin, TX: International SEMATECH, 1999.Google Scholar
2. Iacoponi, J., Presented at the Characterization and Metrology for ULSI Technology conference, Austin, TX, 2003 (unpublished).Google Scholar
3. Vlahacos, C.P., Black, R.C., Anlage, S.M., Amar, A., and Wellstood, F.C., Appl. Phys. Lett. 69, 3272 (1996).CrossRefGoogle Scholar
4. Lann, A., Golosovsky, M., Davidov, D., and Frenkel, A., Appl. Phys. Lett. 75, 3133 (1999).Google Scholar
5. Gao, C. and Xiang, X.-D., Rev. Sci. Instr. 69, 3846 (1998).CrossRefGoogle Scholar
6. Ohara, K., Cho, Y., Jpn. J. Appl. Phys. 41, 4961 (2002).CrossRefGoogle Scholar
7. Pilevar, S., Edinger, K., Atia, W., Smolyaninov, I., and Davis, C., Appl. Phys. Lett. 72, 3133 (1998).Google Scholar
8. Betzig, E., Finn, P.L., and Weiner, J.S., Appl. Phys. Lett. 60, 2484 (1992).CrossRefGoogle Scholar
9. Toledo-Crow, R., Yang, P.C., Chen, Y., and Vaez-Iravany, M., Appl. Phys. Lett. 60, 2957 (1992).CrossRefGoogle Scholar