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Semiconductor Nanocrystals formed in SiO2 by Ion Implantation

Published online by Cambridge University Press:  28 February 2011

Jane G. Zhu ,
C. W. White ,
J. D. Budai ,
S. P. Withrow  and
Y. Chen
Jane G. Zhu
Affiliation:
Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, Oak Ridge, TN 37831
C. W. White
Affiliation:
Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, Oak Ridge, TN 37831
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, Oak Ridge, TN 37831
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, Oak Ridge, TN 37831
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Abstract

Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO2 Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 175
Copyright
Copyright © Materials Research Society 1995

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References

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