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Silicon Nanostructures in Si-Based Light-Emithing Devicesa

Published online by Cambridge University Press:  25 February 2011

Fereydoon Namavar ,
R.F. Pinizzotto ,
H. Yang ,
N. Kalkhoran  and
P. Maruska
Fereydoon Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
R.F. Pinizzotto
Affiliation:
University of North Texas, Denton, TX
H. Yang
Affiliation:
University of North Texas, Denton, TX
N. Kalkhoran
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
P. Maruska
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
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Abstract

High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 343
Copyright
Copyright © Materials Research Society 1993

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Footnotes

a

This work was supported in part by SDIO and monitored by the U.S. Army Research Office

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