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Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

Published online by Cambridge University Press:  25 February 2011

Gikan H. Takaoka ,
Hiroshi Tsuji  and
Junzo Ishikawa
Gikan H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
Hiroshi Tsuji
Affiliation:
Department of Electronics, Kyoto University, Sakyo, Kyoto 606, Japan
Junzo Ishikawa
Affiliation:
Department of Electronics, Kyoto University, Sakyo, Kyoto 606, Japan
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Abstract

SiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 25
Copyright
Copyright © Materials Research Society 1990

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References

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