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SIMS Depth Profiling Free of Martix Effects

Published online by Cambridge University Press:  26 February 2011

Peter Huber ,
Helmut Karl  and
Bernd Stritzker
Peter Huber
Affiliation:
peter.huber@physik.uni-augsburg.de, University of Augsburg
Helmut Karl
Affiliation:
helmut.karl@physik.uni-augsburg.de, University of Augsburg, Germany
Bernd Stritzker
Affiliation:
bernd.stritzker@physik.uni-augsburg.de, University of Augsburg
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Abstract

We present a method of determining elemental depth profiles with secondary ion mass spectrometry (SIMS) corrected by all non-linearities between the SIMS countrate and the elemental concentration caused by chemical matrix effects, resulting in an absolute concentration depth profile. The key to this method is a low dose ion implantation step of corresponding reference isotopes prior to SIMS depth profiling. Spectra evaluation is performed on the basis of a selfconsistent evaluation in which the depth dependent influence of the matrix is determined. The technique is demonstrated for sequentially high dose ion implanted Cd and Se in SiO2.

Keywords

secondary ion mass spectroscopy (SIMS)ion-implantationnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO12-02
Copyright
Copyright © Materials Research Society 2006

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References

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