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Single Crystal Boron-Doped Diamond Synthesis

Published online by Cambridge University Press:  31 January 2011

Timothy Grotjohn ,
Shannon Nicley ,
Dzung Tran ,
Donnie K. Reinhard ,
Michael Becker  and
Jes Asmussen
Timothy Grotjohn
Affiliation:
grotjohn@egr.msu.edu, Michigan State University, ECE, East Lansing, Michigan, United States
Shannon Nicley
Affiliation:
shannon.nicley@gmail.com, Michigan State University, ECE, East Lansing, Michigan, United States
Dzung Tran
Affiliation:
trandung@msu.edu, Michigan State University, ECE, East Lansing, Michigan, United States
Donnie K. Reinhard
Affiliation:
reinhard@egr.msu.edu, Michigan State University, ECE, East Lansing, Michigan, United States
Michael Becker
Affiliation:
mbecker@fraunhofer.org, Fraunhofer USA-CCL, East Lansing, Michigan, United States
Jes Asmussen
Affiliation:
asmussen@egr.msu.edu, Michigan State University, ECE, East Lansing, Michigan, United States
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Abstract

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Keywords

plasma-enhanced CVD (PECVD) (deposition)diamondB
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J17-17
Copyright
Copyright © Materials Research Society 2010

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