Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-15T07:08:18.296Z Has data issue: false hasContentIssue false
  • English
  • Français

A Single Source Approach To Deposition Of Nickel and Palladium Sulfide Thin Films By LP-MOCVD

Published online by Cambridge University Press:  11 February 2011

J. Waters ,
P. O'Brien  and
J.H. Park
J. Waters
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
P. O'Brien
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
J.H. Park
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
Get access

Abstract

Compounds of the type M(S2CNRR’)2, M = Ni(II), Pd(II), RR' = Et2, MeEt and MenBu, have been synthesized and used as single-source precursors for the fabrication of NiS and PdS thin films via low-pressure (LP) metal-organic chemical vapour deposition (MOCVD). The phase of nickel sulfide films deposited on glass substrates was found to be NiS1.03 or a mixture of NiS1.03 and NiS, whilst palladium sulfide films were only tetragonal PdS. The films have been characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM), transition electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.16
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Willoughby, A.F.W., Hull, R. and Capper, P., Widegap II-VI Compounds for Optoelectronic Applications: Electronic Materials Series Vol. 1, ed. Ruda, H.E., London Chapman and Hall, 1992.Google Scholar
[2] Sartale, S.D. and Lokhande, CD., Mater. Chem. Phys. 72 (2001) 101.Google Scholar
[3] Coutts, TJ., Wanless, M.W., Ward, J.S. and Johnson, S., 25th IEEE Photovoltaic Specialists Conference, (1996)25.Google Scholar
[4] Cheon, J., Talaga, D.S. and Zink, J., Chem. Mater. 9 (1997) 1208.Google Scholar
[5] Ermakova, A., Mashkina, A.V. and Sakhaltueva, L.G., Kinet. Catal. 43 (2002) 528.Google Scholar
[6] Zirka, A.A. and Mashkina, A.V., Kinet. Catal. 41 (200) 388.Google Scholar
[7] Bladon, JJ., Lamola, A., Lytle, F.W., Sonnenberg, W., Robinson, J.N. and Philipose, G., J. Electrochem. Soc. 143 (1996) 1206.Google Scholar
[8] Nomura, R. and Hayata, H., Trans. Mater. Res. Soc. Jpn. 26(4) (2001) 1283.Google Scholar
[9] Malik, M. A., O'Brien, P. and Revaprasadu, N., J. Mat. Chem. 12 (2002) 92 Google Scholar
[10] Lee, H., Kana, M., Kawai, T. and Kawai, S., Jpn. J. Appl. Phys. Part 1 32 (1993) 2100.Google Scholar
[11] Pramanik, P. and Biswas, S., J. Solid State Chem. 65 (1986) 145.Google Scholar
[12] Uplane, M.M., Patil, P.S., Uplane, M.D. and Lokhande, CD., Bull. Electrochem. 11 (1995) 569.Google Scholar
[13] Yu, S.-H. and Yoshimura, M., Adv. Funct. Mater. 12 (2002) 277.Google Scholar
[14] Malik, M.A., O'Brien, P. and Revaprasadu, N., J. Mater. Chem. 12 (2002) 92.Google Scholar
[15] Lazell, M., O'Brien, P., Otway, DJ. and Park, J.-H., J. Chem. Soc. Dalton. Trans. 24 (2000) 4479 Google Scholar
[16] Malik, M.A. and O'Brien, P., Adv. Mater. Opt. Electron. 3 (1994) 171.Google Scholar
[17] O'Brien, P., Otway, DJ. and Walsh, J.R., Thin Solid Films 315 (1998) 57.Google Scholar