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Single Variant Orientational Growth of Yba2Cu3O7-x on Vicinal (011) SrTiO3 Substrates.

Published online by Cambridge University Press:  15 February 2011

A. L. Vasiliev ,
D. S. Linehan ,
E. P. Kvam ,
L. Hou  and
M. W. McElfresh
A. L. Vasiliev
Affiliation:
School of Materials Engineering, Purdue University, W.Lafayette, IN 47907
D. S. Linehan
Affiliation:
School of Materials Engineering, Purdue University, W.Lafayette, IN 47907
E. P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, W.Lafayette, IN 47907
L. Hou
Affiliation:
Department of Physics, Purdue University, W.Lafayette,IN 47907
M. W. McElfresh
Affiliation:
Department of Physics, Purdue University, W.Lafayette,IN 47907
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Abstract

The results of a transmission electron microscopic (TEM) and X-ray microanalysis (EDS) study of Yba2Cu3O7-x (YBCO) films grown on vicinal (011) SrTiO3 substrates are presented. The YBCO films tend to be single crystalline grown in single variant orientation with c-axis =;45° from the surface. Cracks, second phase precipitates (CuO and Y2O3), and a few small YBCO grains in other orientations were revealed in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 375
Copyright
Copyright © Materials Research Society 1996

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References

1. Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., and Hirata, K., Appl.Phys.Lett. 53, p. 2232 (1988).Google Scholar
2. Linker, G., Xi, X.X., Meyer, O., Li, Q. and Geerk, J. Solid State Communications 69, p. 249 (1989).Google Scholar
3. Guilloux-Viry, M., Thivet, C., Perrin, A., Sergent, M., Karkut, M. G., Rossel, C., and Catana, A., J.Cryst.Growth 132, p. 396 (1993).Google Scholar
4. Rossel, C., Catana, A., Schulz, R. R., Williams, E. J., Perrin, A., Guilloux-Viry, M., and Thivet, C., Physica C 223, p. 370 (1994).Google Scholar
5. Takeno, S., Nakamura, S., Sagoi, M., and Miura, T., Physica C 176, p. 151 (1991).Google Scholar
6. Linehan, D. S., Kvam, E. P., Hou, L., and McElfresh, M., to be published.Google Scholar
7. Verbist, K., Vasiliev, A. L., and Van, G. Tendeloo Appl.Phys.Lett. 66, p. 1424 (1995).Google Scholar
8. Catana, A., Bednorz, J. G., Gerber, Ch., Mannhart, J., and Shlom, D. G. Appl.Phys.Lett. 63, p. 553 (1993).Google Scholar
9. Catana, A., Broom, R. F., Bednorz, J. G., Mannhart, J., and Shlom, D. G. Appl.Phys.Lett. 60, p.1016 (1992).Google Scholar
10. Selinder, T. I., Helmersson, U., Han, Z., Sundgren, J. E., Sjöstöm, H., and Wallenberg, L. R. Physica C, 202, p. 69 (1992).Google Scholar