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Single-Walled Carbon Nanotube Growth using Al2Ox Buffer Layer at Low Temperature by Alcohol Gas Source Method

Published online by Cambridge University Press:  31 January 2011

Kuninori Sato ,
Takahiro Maruyama  and
Shigeya Naritsuka
Kuninori Sato
Affiliation:
m0834012@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Nagoya, Aichi, Japan
Takahiro Maruyama
Affiliation:
takamaru@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Nagoya, Aichi, 4688502, Japan, +81-52-838-2386, +81-52-832-1172
Shigeya Naritsuka
Affiliation:
narit@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, Nagoya, Aichi, Japan
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Abstract

Aluminum oxide (Al2Ox) buffer layers were employed to grow single-walled carbon nanotubes (SWNTs) at 400°C using an alcohol gas source and a Co catalyst. By optimizing the thickness of the aluminum oxide layer, the SWNT yield was enhanced by a factor of several times. In addition, SWNT growth at 350°C was realized on the Al2Ox buffer layer by this method. Raman measurements at various excitation wavelengths suggest that a Al2Ox buffer layer preferentially enhances the growth of SWNTs with larger diameters (>1 nm).

Keywords

CnanostructureRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K05-27
Copyright
Copyright © Materials Research Society 2010

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