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Slurry Admittance and Its Effect on Polishing

Published online by Cambridge University Press:  01 February 2011

David R. Evans
David R. Evans*
Affiliation:
SHARP Laboratories of America, Inc., Camas, WA 98607, USA
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Abstract

Conventional polishing process variables such as down force, platen speed, slurry flow rate, etc. tend to be both coupled together and indirect. Within this context, one might argue that the net rate of slurry admission or concomitantly, effective volume of slurry between the substrate and pad is a direct process parameter, which is affected by polishing pressure, substrate-pad relative velocity, pad wear and texture, etc. In this work, the role of slurry admittance is investigated by direct control of interference between the pad surface and the carrier retainer ring. Both fixed and dynamic implementations are investigated. Observed patterns of material removal on substrates polished with a fixed orientation are correlated and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F5.1
Copyright
Copyright © Materials Research Society 2003

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References

1. Runnels, S. R. and Eyman, L. M., J. Electrochem. Soc., 141, 1698 (1994).Google Scholar
2. Tichy, John, Levert, J. A., Shan, Lei, and Danyluk, Steven, J. Electrochem. Soc., 146, 1523 (1999).Google Scholar
3. Higgs, Fred and Danyluk, Steven, 2002 Clarkson Univ. Int. CMP Symp., Lake Placid, NY, Aug. 11-14, 2002.Google Scholar
4. Preston, F. J. Soc. Glass Technol., 11, 214 (1927).Google Scholar
5. Philipossian, A. Proc. VMIC XVIII, 8.E (2001).Google Scholar
6. Evans, David R. and Oliver, Michael R. Chemical Mechanical Polishing 2001-Fundamentals and Challenges, PV-671, Mater. Res. Soc., Warrendale, PA, pg. M1.4.1, 2001.Google Scholar