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Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing

Published online by Cambridge University Press:  22 February 2011

S.T. Johnson ,
K.G. Orrman-Rossiter  and
J.S. Williams
S.T. Johnson
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
K.G. Orrman-Rossiter
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
J.S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
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Abstract

High dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 663
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Donnelly Nucl., J.P.Instr. Meth. 182/183, 553 (1981)Google Scholar
2.Eisen, F.H., In “Laser and Electron Beam Processing of Materials”, White, C.W. and Peercy, P.S., eds., Academic Press, New York (1980)p. 309.Google Scholar
3.Williams, J.S., in “Laser Annealing of Semiconductors”, Poate, J.M. and Mayer, J.W, eds., Academic Press, New York (1982) p. 383.Google Scholar
4.Harrison, H.B., Johnson, S.T., Cornish, B., Adams, F.M., Short, K.T. and Williams, J.S., In “Laser-Solid Interactions and Transient Thermal Processing of Materials”, Narayan, J., Brown, W.L. and Lemons, R.A., eds North Holland, (1983) p. 393.Google Scholar
5.Williams, J.S., Brown, W.L., Leamy, M.J., Poate, J.M., Rodgers, J.W., Rousseau, D.Rozgonyi, G.A., Shelnutt, J.A. and Shung, T.T., Appl.Phys.Lett. 33,542,(1978).Google Scholar
6.Rossiter, K.G., Elliman, R.G., Mitchell, I.V., Pogany, A. and Wlliams Nucl., J.S.Instr. Meth. 217, (1983).Google Scholar
7.Nissim, Y. and Gibbons, J.F., in “Laser and Electron-Beam Solid Interactions and Materials Processing”, (Gibbons, J.F., Hess, L.D. and Sigmon, T.W., eds). North Holland (1981) p. 275.Google Scholar
8.Fan, J.C.C., Chapman, R.L., Donnelly, J.P., Turner, G.W. and Bozler, C.O., Appl. Phys. Lett. 34, 780 (1979).Google Scholar
9.Dearnaley, G., Freeman, J.H., Nelson, R.S. and Stephen, J., “Ion Implantation in Semiconductors”, North-Holland, New York (1973).Google Scholar
10.Brawn, J.R. and Grant, W.A., In “Application of Ion Beams to Materials”, (Carter, G., Colligon, J.S. and Grant, W.A., eds.) Inst. Phys. London. (1976) p. 59.Google Scholar