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Solution-Processed Oxide Films, Devices, and Integrated Circuits

Published online by Cambridge University Press:  26 February 2011

Jeremy T Anderson ,
Douglas A. Keszler ,
Stephen T Meyers ,
Hai Q Chiang ,
David Hong ,
Rick E Presley  and
John F Wager
Jeremy T Anderson
Affiliation:
anderjer@oregonstate.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States
Douglas A. Keszler
Affiliation:
douglas.keszler@oregonstate.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States, 5417376736, 5417456369
Stephen T Meyers
Affiliation:
meyerste@onid.orst.edu, Oregon State University, Chemistry, 153 Gilbert Hall, Corvallis, OR, 97331-4003, United States
Hai Q Chiang
Affiliation:
chiang@eecs.oregonstate.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
David Hong
Affiliation:
hongda@engr.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
Rick E Presley
Affiliation:
presley@engr.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
John F Wager
Affiliation:
jfw@eecs.orst.edu, Oregon State University, Electrical Engineering and Computer Science, 1148 Kelley Engineering Center, Corvallis, OR, 97331-5501, United States
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Abstract

A distinct class of precursor chemistries has been developed for solution-phase deposition of oxide thin films. Rapid liquid-to-solid conversions are facilitated by using high nuclearity species and labile inorganic ligands to promote fast condensation reactions. Consequently, applied deposition strategies differ from conventional sol-gel and surface mediated growth reactions. Select oxide materials have been incorporated in transistor devices and circuits as evidence of thin-film quality and proof of function.

Keywords

electronic materialthin filmsolution deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 988: Symposium QQ – Solid-State Chemistry of Inorganic Materials VI , 2006 , 0988-QQ01-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature 432, 488 (2004).Google Scholar
2. Robertson, J., Rep. Prog. Phys. 69, 327 (2006).Google Scholar
3. Schwartz, R. W., Schneller, T., and Waser, R., C. R. Chim. 7, 433 (2004).Google Scholar
4. Bhuiyan, M. S., Paranthaman, M., and Salama, K., Supercond. Sci. Technol. 19, R1 (2006).Google Scholar
5. Schroeder, H., “Oxide Layers Deposited from Organic Solutions,” in Physics of Thin Films, edited by Hass, G. and Thun, R. E., (Academic Press, New York, 1969), Vol. 5, pp 87–141.Google Scholar
6. Brinker, C. J. and Scherer, G. W. in Sol-Gel Science, (Academic Press, Inc., San Diego, 1990), pp 453–508.Google Scholar
7. Niesen, T. P. and Guire, M. R. De, Solid State Ionics 151, 61 (2002).Google Scholar
8. Waser, R., Schneller, T., Hoffmann-Eifert, S., and Ehrhart, P., Integrated Ferroelectronics 36, 3 (2001).Google Scholar
9. Crowell, J. E., J. Vac. Sci. Technol. A 21, S88 (2003).Google Scholar
10. Sun, B. and Sirringhaus, H., Nano Lett. 5, 2408 (2005).Google Scholar
11. Cheng, H.-C., Chen, C.-F., and Lee, C.-C., Thin Solid Films 498, 142 (2006).Google Scholar
12. Hossain, F. M., Nishii, J., Takagi, S., Ohtomo, A., Fukumura, T., Fujioka, H., Ohno, H., Koinuma, H., and Kawasaki, M., J. Appl. Phys. 94, 7768 (2003).Google Scholar
13. Carcia, P. F., McLean, R. S., and Reilly, M. H., J. Soc. Inf. Disp. 13, 547 (2005).Google Scholar