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Space Charge Limited Current in Porous Silicon with traces of Nitrogen Dioxide

Published online by Cambridge University Press:  01 February 2011

Stefano Borini ,
Andrea M. Rossi ,
Luca Boarino  and
Giampiero Amato
Stefano Borini
Affiliation:
Nanotechnology and Microsystems Dept., IEN Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
Andrea M. Rossi
Affiliation:
Nanotechnology and Microsystems Dept., IEN Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
Luca Boarino
Affiliation:
Nanotechnology and Microsystems Dept., IEN Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
Giampiero Amato*
Affiliation:
Nanotechnology and Microsystems Dept., IEN Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
*
*Corresponding author, E-mail: gamato@ien.it
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Abstract

The discovery of the steep increase of electrical conductivity in Porous Silicon (PS) samples in contact with Nitrogen Dioxide, NO2, opens the possibility to study the electrical conduction processes in nanostructured systems from a completely new point of view. The system undergoes a change of conductivity of 5 orders of magnitude when exposed to few ppm of NO2, whereas the free charge concentration increases by only one order of magnitude in the same pressure range. Upon NO2 exposure the system transition from an “insulator-like” to a “semiconductor-like” behaviour can be studied by means of several techniques. In this paper, the results from a Space Charge Limited Current (SCLC) study unambiguously demonstrate the change of the charging status of defects upon NO2exposure, and explain some “exotic” effects recently reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J18.30
Copyright
Copyright © Materials Research Society 2005

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