Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T04:57:10.546Z Has data issue: false hasContentIssue false

A static technique for the electro-mechanical characterization of MEMS devices for RF and microwave applications

Published online by Cambridge University Press:  01 February 2011

Anupama B. Kaul
Affiliation:
Advance Technology Center, Motorola Labs, Schaumburg, IL 60196, USA
Tomasz Klosowiak
Affiliation:
Advance Technology Center, Motorola Labs, Schaumburg, IL 60196, USA
Joshua Liu
Affiliation:
Advance Technology Center, Motorola Labs, Schaumburg, IL 60196, USA
Get access

Abstract

An approach for measuring force-dependent properties of microscopic structures commonly found in MEMS has been developed. The system has the capability of measuring forces and deflections of the order of micro-newtons and micro-meters, respectively. By implementing a visual inspection system, force is applied to localized areas on a beam, and the resulting force-deflection characteristic can be obtained. From this beam stiffness and effective elastic modulus can be calculated. These results were compared to simulation, which was performed using ANSYS FEM code. In addition, by applying a known mechanical force, direct correlation to voltage and thus electrostatic force can be obtained, which also elucidates the magnitude of the electrostatic feedback effect. Characterization of other force-dependent parameters such as DC contact resistance and isolation/insertion loss at RF and microwave frequencies was obtained experimentally, from which parameters such as lumped capacitance can be extracted.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Petersen, K., IBM J. Res. Develop., 23 (1979) p. 376.Google Scholar
[2] Weihs, T. P., Hong, S., Bravman, J. C., and Nix, W. D., J. Mater. Res., 3 (1988) p. 232.Google Scholar
[3] Pacheco, S. P., Katehi, L. P. B., and Nguyen, C. T.-C., IEEE MTT-S Digest, (2000) p. 165.Google Scholar
[4] Majumder, S., McGruer, N. E., Zavracky, P. M., Adams, G. G., Morrison, R. H., and Krim, J., Transducers'97, (1997) p. 1145.Google Scholar
[5] Hyman, D. and Mehregany, M., IEEE Trans. on Comp. and Pack. Tech., 22 (3) (1999) p. 357.Google Scholar
[6] Holm, R., Electric Contacts Handbook, 4th Ed. Berlin, Germany: Springer-Verlag, 1967.Google Scholar
[7] Rebeiz, G. M. and Muldavin, J. B., IEEE Microwave Mag., (2001) p. 59.Google Scholar