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Strategies for CMOS Low Equivalent Oxide Thickness Achievement with High-κ Oxides Grown on Si(001) by MBE

Published online by Cambridge University Press:  01 February 2011

Loic Becerra ,
Clément Merckling ,
Nicolas Baboux ,
Mario El-Kazzi ,
Guillaume Saint-Girons ,
Bertrand Vilquin ,
Carole Plossu  and
Guy Hollinger
Loic Becerra
Affiliation:
loic.becerra@ec-lyon.fr, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
Clément Merckling
Affiliation:
mercklin@imec.be, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
Nicolas Baboux
Affiliation:
nicolas.baboux@insa-lyon.fr, UMR CNRS 5270, INL, INSA de Lyon - Bât. B. Pascal, 7 Avenue Jean Capelle, Villeurbanne, 69621, France
Mario El-Kazzi
Affiliation:
Mario.kazzi@ec-lyon.fr, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
Guillaume Saint-Girons
Affiliation:
guillaume.saint-girons@ec-lyon.fr, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
Bertrand Vilquin
Affiliation:
bertrand.vilquin@ec-lyon.fr, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
Carole Plossu
Affiliation:
carole.plossu@insa-lyon.fr, UMR CNRS 5270, INL, INSA de Lyon - Bât. B. Pascal, 7 Avenue Jean Capelle, Villeurbanne, 69621, France
Guy Hollinger
Affiliation:
Guy.Hollinger@ec-lyon.fr, UMR CNRS 5270, INL, Ecole Centrale de Lyon - Bât. F7, 36 Avenue Guy de Collongue, Ecully, 69134, France
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Abstract

Amorphous LaAlO3 high-k oxide was grown in a molecular beam epitaxy reactor on p-Si(001) using a thin γ-Al2O3 epitaxied buffer layer. Interfaces were free of SiO2 or silicates and remained abrupt despite the high temperature used for annealing, as X-ray photoelectron spectroscopy showed. Electrical measurements performed on as-deposited samples revealed a dielectric constant value close to that of the bulk, small equivalent oxide thickness and low density of interface states. But some negative charges were present, leading to a flat band voltage shift. Post deposition annealing with forming gas can correct this effect.

Keywords

microelectronicsoxidemolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H03-08
Copyright
Copyright © Materials Research Society 2008

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References

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