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Stress Mapping of SiC Wafers by Synchrotron White Beam X-ray Reticulography

Published online by Cambridge University Press:  01 February 2011

Ning Zhang ,
Yi Chen ,
Edward Sanchez ,
Michael F. MacMillan  and
Michael Dudley
Ning Zhang
Affiliation:
nizhang@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Edward Sanchez
Affiliation:
edward.sanchez@dowcorning.com, Dow Corning Compound Semiconductor Solutions, Midland, MI, 48611, United States
Michael F. MacMillan
Affiliation:
mike.macmillan@dowcorning.com, Dow Corning Compound Semiconductor Solutions, Midland, MI, 48611, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
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Abstract

Synchrotron white beam x-ray reticulography was used to quantitatively map the residual stress/strain in SiC wafers. The basic principle of our study is that there exists a relationship between the stress state in a crystal and the local lattice plane orientation and that this relationship can be exploited in order to determine the full strain tensor as a function of position inside the crystal. The theoretical background of the stress mapping using synchrotron white beam x-ray reticulography is introduced and it is based on the change of plane normal of the lattice plane due to the distortion associated with the residual strain. The stress mapping of a crystal region from a commercial 4H silicon carbide wafer has been studied using this technique and the results are discussed. This technique can in principle be used in any single crystal material.

Keywords

stress/strain relationshipstructuralcrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-07
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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