Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-15T07:07:34.892Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress measurement Of BPDA/PDA Polyimides From Poly(Amic Acid) And Photosensitive Polyimide Precursors On Silicon

Published online by Cambridge University Press:  15 February 2011

Hideshi Nomura ,
Masuichi Eguchi ,
Katsuhiro Niwa  and
Masaya Asano
Hideshi Nomura
Affiliation:
Electronic and Imaging Materials Research Laboratories, Toray Industries, Inc., 2–1 Sonoyama 3-chome, Otsu, Shiga 520, Japan
Masuichi Eguchi
Affiliation:
Electronic and Imaging Materials Research Laboratories, Toray Industries, Inc., 2–1 Sonoyama 3-chome, Otsu, Shiga 520, Japan
Katsuhiro Niwa
Affiliation:
Electronic and Imaging Materials Research Laboratories, Toray Industries, Inc., 2–1 Sonoyama 3-chome, Otsu, Shiga 520, Japan
Masaya Asano
Affiliation:
Electronic and Imaging Materials Research Laboratories, Toray Industries, Inc., 2–1 Sonoyama 3-chome, Otsu, Shiga 520, Japan
Get access

Abstract

The intrazeolite chemistry of the two germylene complexes Cl2(THF)GeM(CO)5(M = Mo, W) was studied with x-ray absorption spectroscopy (Ge, Mo, W edge EXAFS) and in-situ FTIR/TPD-MS techniques. The slightly decarbonylated GeMo complex interacts with the framework of NaY zeolite at room temperature and retains the Ge-Mo bond up to about 100° C. In proton-loaded HY zeolite, framework interactions increase at elevated temperature, and the attached complex retains the Ge-Mo bond up to about 120° C. The Ge-Mo bond is cleaved at higher temperatures. MoC1x and Mo-Mo species are formed in NaY and HY zeolite, respectively, while GeClx fragments are anchored to the zeolite framework.

The complex Cl2 (THF)GeW(CO) 5 retains all five CO ligands up to about 100° C in both NaY and the proton form. Detectable anchoring occurs at room temperature in NaY and at about 80° C in the proton form. WC1x species are formed upon cleavage of the Ge-W bond at higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 227: Symposium J – Materials Science of High Temperature Polymers for Microelectronics , 1991 , 195
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Senturia, S.D., ACS Symp. Ser. 346, 428 1987.CrossRefGoogle Scholar
[2] Wilson, A.W., Thin Solid Films 83, 145 (1981).CrossRefGoogle Scholar
[3] Moriya, K., Ohsaki, T., and Katsura, K., Electron Components Conf. 34th, 821 (1984).Google Scholar
[4] Goldsmith, C., Geldermans, P., Bedetti, F., and Walker, G.A., J.Vac. Sci. Technol. Al, 407 (1983).CrossRefGoogle Scholar
[5] Bauer, C.L. and Farris, R.J., in Polyimides: Materials, Chemistry and Characterization, edited by Feger, C., Khojasteh, M.M., and McGrath, J.E. (Elsevier Science Publishers B. V., Amsterdam, 1989), p.549.Google Scholar
[6] Numata, S., Oohara, S., Fujisaki, K., Imaizumi, J., and Kinjo, N., J. Appl. Polym. Sci. 31, 101 (1986).CrossRefGoogle Scholar
[7] Yoda, N. and Hiramoto, H., J.Macromol.Sci.-Chem. A21, 1641 (1984).CrossRefGoogle Scholar
[8] Rubner, R., Ahne, H., Kuhn, E., and Kolodziej, G., Photogr. Sci. Eng. 23, 303 (1979).Google Scholar
[9] Ahne, H., Domke, W.-D., Rubner, R., and Schreyer, M., ACS Symp.Ser. 346, 457 (1987).CrossRefGoogle Scholar
[10] Pan, J.T. and Blech, I., J.Appl.Phys. 55, 2874 (1984).CrossRefGoogle Scholar
[11] Hoffman, R.W., in Physics of Thin Films, edited by Hass, G. and Thun, R.E. (Academic Press, New York, 1966), Vol.3, p. 211.Google Scholar
[12] Brantley, W.A., J.Appl.Phys. 44, 534 (1973).CrossRefGoogle Scholar
[13] Elsner, G., Kempf, J., Bartha, J.W., and Wagner, H.H., Thin Solid Films 185, 189 (1990).CrossRefGoogle Scholar
[14] Russell, T.P., Gugger, H., and Swalen, J.D., J.Polym.Sci., Polym. Phys.Ed. 21, 1745 (1983).CrossRefGoogle Scholar
[15] Snyder, R.W. and Painter, P.C., Polym. Mater. Sci. Eng. 59, 57 (1988).Google Scholar